TSMC Outlines New High-k/Metal-gate 32nm Process


Written on April 23, 2008 – 11:01 am | by admin

Responding to IBM and its development partners that took the lead in the nm battle by announcing the availability of a high-k and metal-gate 32nm offering, Taiwan Semiconductor Manufacturing (TSMC) today outlined more details about its 32nm process. Rick Tsai, president and chief executive of the company said “We will have high-k and metal-gate at 32nm,” during a keynote at the 2008 Technology Symposium. Jack Sun, vice president of research and development, also indicated that TSMC will develop a third-generation triple-gate oxide technology for its 32nm low-power process. For its 32nm high-performance process, TSMC will offer a high-k and metal gate technology, Sun added.

Source: EETimes

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